please design the appropriate reliability upon reviewing the ty semiconductor reliability handbook SSM6N35FE high-speed switching applications analog switch applications ? 1.2-v drive ? n-ch 2-in-1 ? low on-resistance: r on = 20 ? (max) (@v gs = 1.2 v) : r on = 8 ? (max) (@v gs = 1.5 v) : r on = 4 ? (max) (@v gs = 2.5 v) : r on = 3 ? (max) (@v gs = 4.0 v) absolute maximum ratings (ta = 25c) (q1, q2 common) characteristics symbol rating unit drain?source voltage v dss 20 v gate?source voltage v gss 10 v dc i d 180 drain current pulse i dp 360 ma drain power dissipation p d (note 1) 150 mw channel temperature t ch 150 c storage temperature t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the si gnificant change in temperature, etc. ) may cause this product to decrease in the reliability significantly even if the operating condi tions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. (?handling precautions?/?derating concept and methods?) and indi vidual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: to ta l r a t i n g mounted on an fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 0.135 mm 2 6) marking equivalent circuit (top view) unit: mm 0.20.05 6 1.20.05 1.60.05 1.00.05 1 2 0.50.5 3 1.60.05 5 4 0.120.05 0.550.05 weight: 3.0 mg (typ.) k z 6 5 4 1 2 3 q1 q2 654 123 1.source1 2.gate1 3.drain2 4.source2 5.gate2 6.drain1 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta = 25c) (q1, q2 common) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0v ? ? 10 a drain?source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0v 20 ? ? v drain cutoff current i dss v ds = 20 v, v gs = 0v ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 1 ma 0.4 ? 1.0 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 50 ma (note 2) 115 ? ? ms i d = 50 ma, v gs = 4 v (note 2) ? 1.5 3 i d = 50 ma, v gs = 2.5 v (note 2) ? 2 4 i d = 5 ma, v gs = 1.5 v (note 2) ? 3 8 drain?source on-resistance r ds (on) i d = 5 ma, v gs = 1.2 v (note 2) ? 5 20 input capacitance c iss ? 9.5 ? reverse transfer capacitance c rss ? 4.1 ? output capacitance c oss v ds = 3 v, v gs = 0v, f = 1 mhz ? 9.5 ? pf turn-on time t on ? 115 ? switching time turn-off time t off v dd = 3 v, i d = 50 ma, v gs = 0 to 2.5 v ? 300 ? ns drain?source forward voltage v dsf i d = - 180 ma, v gs = 0v (note 2) ? -0.9 -1.2 v note 2: pulse test switching time test circuit (q1, q2 common) (a) test circuit (b) v in usage considerations let v th be the voltage applied between gate and sour ce that causes the drain current (i d ) to below (1 ma for the SSM6N35FE). then, for normal switching operation, v gs(on) must be higher than v th, and v gs(off) must be lower than v th. this relationship can be expressed as: v gs(off) < v th < v gs(on). take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. v dd = 3 v d.u. 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c v dd out in 2.5 v 0 10 s 50 r l (c) v out t on 90% 10% 0 v 2.5 v 10% 90% t off t r t f v dd v ds ( on ) SSM6N35FE product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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